PART |
Description |
Maker |
BBY51 Q62702-B631 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BBY51-03W BBY5103W Q62702-B663 |
ER 9C 6#16 3#12 PIN RECP BOX Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
Q62702-B824 BBY53 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) From old datasheet system
|
http:// Siemens Group SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
Q62702-B915 BBY57-02W BBY5702W |
From old datasheet system Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance High capacitance ratio)
|
Siemens Group SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BBY51-02W Q62702-B0858 BBY5102W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管(高Q hyperabrupt调谐二极管低串联电感 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BBY52-05W |
Silicon High Q Hyperabrupt Tuning Diode
|
Infineon
|
BBY57-03W |
Silicon High Q Hyperabrupt Tuning Diode
|
Infineon
|
MMVL809T1 MMVL809T1G |
UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN Silicon Tuning Diode
|
ONSEMI[ON Semiconductor]
|
KDV310E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning
|
KEC(Korea Electronics)
|
KDV1471 |
FM Tuning VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|